InGaN Light-Emitting Diodes with Directional nano-pipe structures
碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === InGaN light-emitting diodes (LEDs) with directional nano-pipe GaN structures were fabricated through a selectively electrochemical (EC) etching process. A 0.85μm-thick n+-GaN:Si epitaxial layer inserted between LED structure and sapphire substrate was transfo...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/70858750040606141749 |