Optoelectronic Properties of Free-Standing InGaN Membranes
碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === In this thesis, sacrificial layer is embedded under the 300 nm-thick light emitting diode device with top ITO/Ti/Au thin film deposited on the wafer to protect device. After the electrochemical wet etching, nano-membrane LED are not subject to vertical etchin...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54161441798079208387 |