Reliability Study on the Low-Temperature Processed a-IGZO Thin Film Transistors
碩士 === 國立中興大學 === 光電工程研究所 === 103 === Relibility is an important issue we are concerned with. First of all, we try to improve it by dual channel layer a-IGZO TFT structure. In the result, we figure out that there are some process conditions related with reliability we need to make more clearly such...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42075195750414635846 |