Fabrication and characterization of Ga, F co-doped zinc oxide thin films by radio-frequency magnetron sputtering

• Main Authors: He-Syun Jhuang, 莊和勳
• Other Authors: 汪芳興
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/12073854773533777694

碩士 === 國立中興大學 === 光電工程研究所 === 103 === In this study, gallium and fluorine co-doped zinc oxide (GFZO) thin films were deposited on Corning EagleXG glass with RF magnetron sputtering system. We used ZnO targets containing 3wt% Ga2O3, named GZO. Then, we introduced doping gas tetrafluoromethane (CF4) into the chamber during sputtering process. This experiments use Ar as a background gas and vary CF4/Ar flow ratio. Base pressure, working pressure, plasma power, film thickness, and working distance were fixed at 5 × 10-6 Torr, 5 × 10-3 Torr, 100 W, 330 nm and 8 cm. GFZO thin films with CF4/Ar 0.2% were deposited on glass at the different substrate temperatures of RT, 100°C, 200°C. After thin film deposition, the films prepared at room temperature and CF4 0.2% were annealed at 200°C, 300°C, and 400°C. Effects of F content, substrate temperature, and annealing on electrical, optical and structural properties of thin films were explored. In all films, the transmittance in the visible range was over than 89%. For RT-deposited and CF4-doped GFZO series, the lowest resistivity of 3.372×10-3 Ω-cm was obtained without CF4 doping, and for CF4 0.2% at the different substrate temperature series, the lowest resistivity of 6.465×10-4 Ω-cm was obtained with substrate temperature at 200°C. For the RT-deposited and annealed samples, the crystallinity of all thin films was improved, and resistivity decreased >30%. The transmittance showed a slight improvement (2~3%) at visible region. The findings showed furnace annealing enhanced the electrical, optical and structural properties of the films.