Characterization of Parasitic BJT Breakdown and MOS Punch Through in Single-sided Non-Overlapped Implantation MOSFETs
碩士 === 中原大學 === 電子工程研究所 === 103 === Semiconductor memories develop different structures to cater to various functions under the semiconductor industry fast development nowadays. Non-volatile memory has been the application of the anti-fuse cell, which is coded by altering the high resistance (or non...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3w2d99 |