Fabrication and Characterization of Compound Semiconductor Fin Structure and Devices via Nanoimprint
碩士 === 中原大學 === 電子工程研究所 === 103 === Si MOSFET has been scaled down to nanometer to achieve high speed operation and high device density. However, the short-channel effects are important issues that can be released by tri-gate FinFET. Moreover, the quantum confinement effect can reduce the phonon sca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20322576433239473445 |