Performance Investigation of LaAlO3/ZrO2/InGaZnO Thin Film Transistor Using Microwave Annealing
碩士 === 中華大學 === 電機工程學系碩士班 === 103 === In order to improve the performance of MOSFET transistors, the size of divice is requested to shrink and equivalent oxide thickness (EOT) is even requested to reduce to 1.0 nm below in future CMOS technology. However , when the SiO2 scale down to 1.5 nm below, t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95947911698571091709 |