| Summary: | 碩士 === 元智大學 === 化學工程與材料科學學系 === 102 === The Effects of different deposition parameters of silicon nitride (Si3N4) thin film prepared by plasma enhance chemical vapor deposition (PECVD) method on breakdown voltage (Vbd) were investigated in this study.
The current results show that RF power and electrode spacing can greatly affect Vbd of Si3N4 thin film. Reduction of RF power and electrode spacing increased Vbd of Si3N4 thin film.
After conducting reliability test on the capacitor of Vbd thin film before and after improving Vbd, it is found that the capacitor’s durability can be greatly increased through improving Vbd of Si3N4 thin film, further to improve product quality. The XPS analysis pointed out that Si3N4 thin film with higher Vbd contains higher binding energy. Si3N4 (N1s) can have higher breakdown voltage. If Vbd of Si3N4 needs to be improved in the future, increasing the pure Si3N4 content is a key way.
In this study, Vbd of Si3N4 thin film was greatly enhanced by reducing the RF power and electrode spacing, due to higher content of pure Si3N4. Our study provide an efficient way to develop a Si3N4 thin film capacitor with higher Vbd.
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