Effects of deposition conditions of Si3N4 thin film on breakdown voltage for capacitor on GaAs monolithic microwave integrated circuit (MMIC)
碩士 === 元智大學 === 化學工程與材料科學學系 === 102 === The Effects of different deposition parameters of silicon nitride (Si3N4) thin film prepared by plasma enhance chemical vapor deposition (PECVD) method on breakdown voltage (Vbd) were investigated in this study. The current results show that RF power and e...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/24872975865673569652 |