Different Nitrogen Concentrations and Annealing Temperatures on Leakage Current Characteristics of High-k Stack PMOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 102 === In recent years, high-k/metal-gate (HK/MG) stack technique has widely applied in the advanced MOSFETs because of decreasing equivalent oxide thickness (EOT). It also can solve the leakage issue due to continued device scaling down, raising up the drive current...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/recz44 |