Effect of Phosphorus Dose Loss on C-V Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors
碩士 === 亞洲大學 === 光電與通訊學系 === 102 === In the high-tech industry, the device size continue to shrink, the traditional devices metal-oxide-semiconductor field effect transistor (MOSFET)structure is approaching to the physical limits, it make Nano device need to develop different structure and material a...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44300477239201369382 |