A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology

A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology

碩士 === 亞洲大學 === 資訊工程學系 === 102 === The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Latera...

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Main Author: Antonius Fran Yannu Pramudyo
Other Authors: Gene Sheu
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/42685101310663416411
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spelling ndltd-TW-102THMU03960012017-01-14T04:15:13Z http://ndltd.ncl.edu.tw/handle/42685101310663416411 A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology Antonius Fran Yannu Pramudyo Antonius Fran Yannu Pramudyo 碩士 亞洲大學 資訊工程學系 102 The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) Integrated on 0.35μm BCD process technology. Accuracy of process simulation is very important to predict the doping profiles resulted from ion implantation and diffusion during process simulation. In this thesis, we develop a novel structure of high performance 80V high side NLDMOS integrated on 0.35μm BCD process technology and it was simulated using Synopsys TCAD simulators. Simulation results are compared with experiment results and both results are in good agreement. Gene Sheu 許健 2014 學位論文 ; thesis 64 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 亞洲大學 === 資訊工程學系 === 102 === The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) Integrated on 0.35μm BCD process technology. Accuracy of process simulation is very important to predict the doping profiles resulted from ion implantation and diffusion during process simulation. In this thesis, we develop a novel structure of high performance 80V high side NLDMOS integrated on 0.35μm BCD process technology and it was simulated using Synopsys TCAD simulators. Simulation results are compared with experiment results and both results are in good agreement.
author2 Gene Sheu
author_facet Gene Sheu
Antonius Fran Yannu Pramudyo
Antonius Fran Yannu Pramudyo
author Antonius Fran Yannu Pramudyo
Antonius Fran Yannu Pramudyo
spellingShingle Antonius Fran Yannu Pramudyo
Antonius Fran Yannu Pramudyo
A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
author_sort Antonius Fran Yannu Pramudyo
title A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
title_short A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
title_full A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
title_fullStr A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
title_full_unstemmed A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
title_sort novel structure of high performance 80v high side nldmos integrated on 0.35μm bcd process technology
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/42685101310663416411
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