A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
碩士 === 亞洲大學 === 資訊工程學系 === 102 === The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Latera...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42685101310663416411 |