A Novel Structure of High Performance 80V High Side NLDMOS Integrated on 0.35μm BCD Process Technology
碩士 === 亞洲大學 === 資訊工程學系 === 102 === The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Latera...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42685101310663416411 |
| Summary: | 碩士 === 亞洲大學 === 資訊工程學系 === 102 === The developed 0.35µm BCD Process Integration is now leading by industry and provides various kinds of high voltage LDMOS (low-side and high-side) for variety of applications. We propose a novel Structure of High Performance 80V High-Side n-channel LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) Integrated on 0.35μm BCD process technology. Accuracy of process simulation is very important to predict the doping profiles resulted from ion implantation and diffusion during process simulation. In this thesis, we develop a novel structure of high performance 80V high side NLDMOS integrated on 0.35μm BCD process technology and it was simulated using Synopsys TCAD simulators. Simulation results are compared with experiment results and both results are in good agreement.
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