Investigation on the Mechanical Behavior of IGBT Power Module Subjected to Thermal Loading Using Phase-stepping Shadow Moire and Finite Element Analysis
碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 102 === In recent years, along with the improvement on manufacturing of semiconductor, the insulate gate bipolar transistors (IGBT) power transistors become to have high input impedance, low driving voltage, etc., and this makes they have been widely used in power...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7yt62e |