Study on Amorphous Silicon Floating-Gate Doping Concentration and the Resistance
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所在職專班 === 102 === This work is to study the relationship between the doping concentration and electrical resistance of N+ Floating gate. Nowadays NOR Flash Floating gate uses a LPCVD deposition of amorphous silicon with a doing of 1% PH3/He. The resistance uniformity...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gn3ngx |