| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 102 === In this study, the motivation is for the reference of DLC structure, silicon carbide deposited before aluminum film to discussing its effect of the Al-Base AuSn eutectic bonding joint structure. Because Al surface can’t electroplate direct, so first used Zn replaced the surface of Al, and deposited Ni by electroless Nickel. Then the Au/Sn stack-layer were electroplated on the metal. In the experiment ,we can observe the film will pilling after the thermal bonding process. According to the literature, this may be attributed to the Coefficient of thermal expansion different too large. We refer to the LED structure of using SiC-base, deposited the thin AlN film after deposited SiC film. Because the lattice constant and Coefficient of thermal expansion of SiC and AlN is nearly, then the lattice constant of Al and AlN also near match. After the experiment, the film adhesion of new structure is better than the old, film not pilling after bonding process. So this study using the metal sub-layer to explore the Au/Sn better alloy temperature on the Al-base. Structural characterizations were performed by SEM, EDX, and XRD. Finally, the lithography was utilized on glass substrates, after stack-layer completed, combined the LED by flip-chip to measure and analysis Electrical characteristics.
|
|---|
