Study on Quantum Well PMOSFET with Schottky S/D and Germanium NMOSFET using Fluorine Co-implant
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 102 === As continuously scaling down the devices for logic circuit, it is indispensable in overcoming the issues of mobility degradation and S/D parasitic resistance. Ge possesses high mobility and has been reported for replacing Si to continuously boost the device pe...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99362647630703214878 |