A Study of ESD Robustness in the HV-nLDMOS with Super-Junction structures
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 102 === Due to process technology is advancing with each passing day, device feature size miniature and power devices grown up rapidly, then the electrostatic discharge (ESD) problem becomes more serious. And, today’s driver IC, automotive electronics and power elec...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98550470378928087522 |