Development of an Electrical Kinetic-Force Assisted Chemical Mechanical Planarization (EKF-CMP) for Functional Wafer Planarization

• Main Authors: Li-Chen Yang, 楊立晨
• Other Authors: Chao-Chang Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/36639591151287463271

碩士 === 國立臺灣科技大學 === 機械工程系 === 102 === Three-dimensional stacking integrated circuit (3DS-IC) is considered to be a key technology to break through the limitations of Moore's law. The main technology is using the silicon or glass substrate with via which called through silicon via (TSV) and through glass via (TGV) to be interposer for stacking heterogeneous elements. The alkali glass of TGV is also an important material for biochip fabrication. This study develops an electrical kinetic-force assisted chemical mechanical planarization (EKF-CMP) for functional wafer by a designed damascene electrode on conductive plate to achieve micro area abrasive circulation of slurry. From simulation results, effect of electro-osmosis flow rate by different electrode gap can be used to design and fabricate the conductive plate for EKF-CMP. Experimental results shows that the MRR of copper blanket wafer with two kinds of slurry have been obtained by CMP and EKF-CMP tests that of material removal rate (MRR) by Slurry A can increase 36.6% and slurry B can increase 64.7% MRR of copper blanket wafer by EKF-CMP. As for the TSV pattern wafer after planarization by CMP and EKF-CMP, the MRR of EKF-CMP is faster than CMP and lower dishing in MA.2 region can be observed by EKF-CMP. For glass substrate, the MRR of glass substrate also increases 20% by EKF-CMP and the surface roughness Sa is maintained as 1.74 nm. Results of this study can verify the planarization efficiency by EKF-CMP for future application on TSV-CMP and TGV-CMP.