Surface Passivation of Germanium Wafers using Hydrogenated Amorphous Silicon Layers
碩士 === 國立臺灣科技大學 === 化學工程系 === 102 === In this paper, we studied several important issues concerning fabrication of crystalline germanium (Ge) hetero-junction using amorphous Si as the passivation layers. First of all, surface cleaning procedure of Ge wafers was established through a comparison with...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66857266560171042056 |