Heteroepitaxy Ge/Si and Dopant Incorporation by Chemical Vapor Deposition
博士 === 國立臺灣大學 === 電子工程學研究所 === 102 === To scale down the CMOS devices in the future, Ge not only the compatible with current Si industry, but also the higher carrier mobility than Si channel. For hole mobility, Ge has the highest hole mobility even compared with group III-V materials. Using the SiG...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2014
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Online Access: | http://ndltd.ncl.edu.tw/handle/78089044651051477266 |