Fabrication and Characterization of Heterojunction Bipolar Phototransistors for Opto-electrical Integrated Circuits
碩士 === 國立臺灣大學 === 光電工程學研究所 === 102 === The heterojunction bipolar transistor (HBT) can be modified and operated as a three-port light-emitting device (an electrical input, an electrical output, and a third port optical output) by incorporating one or more quantum wells in the base region, thus becom...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82155377659282812761 |