| Summary: | 碩士 === 國立清華大學 === 工程與系統科學系 === 102 === In this study, we demonstrated the Gate-All-Around Junctionless FinFET SOncOS Nonvolatile Memory with Silicon Nanocrystals to improve the memory window and reliability. Moreover, the Si-NCs has the simple process and compatible with current Flash memory process. Therefore, it has more opportunity to apply for high density 3D stack technology.
In this research, the n-channel device has better programming efficiency and p-channel device has better erasing efficiency by using the FN-tunneling mechanisms. In the reliability analysis, the p-channel device has excellent P/E cycles but the n-channel device is degenerative. For n-channel device, the interface traps lead to the SS degeneracy and reduce the P/E speed. However, the n-channel and p-channel devices have good retention characteristic during the 85°C to simulate the ability of retaining charges after ten years. The good retention ability is contributed which Si-NCs has the deep conduction and valence band to store the charge. On the other hand, we proposed the BBHH erase mechanism in p-channel device. After the 104 P/E cycles it still has excellent characteristic. For retention characteristic, the device memory windows maintain more 90% under ten years at 85°C. Above the mention, we can realize the Gate-All-Around Junctionless FinFET SOncOS Nonvolatile Memory with Silicon Nanocrystals device not only enhance the P/E efficiency but also improve the reliability.
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