Development of 4H-SiC Bipolar Devices
碩士 === 國立清華大學 === 電子工程研究所 === 102 === The thesis reports the design and fabrication of 4H-SiC bipolar devices including p-i-n diodes and bipolar junction transistors. Conventional 4H-SiC p-i-n diodes suffers from a reliability problem called bipolar degradation. It is believed that the recombination...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mrde8d |