Study on the Reliability of POCl3 Annealed ALD SiO2 for 4H-SiC MOSFETs

Study on the Reliability of POCl3 Annealed ALD SiO2 for 4H-SiC MOSFETs

碩士 === 國立清華大學 === 電子工程研究所 === 102 === 因申請專利緣故，資料延後公開

Bibliographic Details
Main Authors:	Lo, Wei-Tang, 羅偉唐
Other Authors:	Huang, Chih-Fang
Format:	Others
Language:	zh-TW
Published:	2014
Online Access:	http://ndltd.ncl.edu.tw/handle/a3m95q

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