Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 102 === This article describes that we grew GaN films by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) on the (La,Sr)(Al,Ta)O3 substrate (100) surface. Lattice parameter of (La,Sr)(Al,Ta)O3 are closed to GaN, the lattice mismatch between (La,Sr)(Al,Ta)O3 [1-10] and Ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11974170097363235923 |