Study of Relative Humidity Sensing Device Using Zinc Oxide Compound with Aluminum Doping

• Main Authors: Guan-Hua LU, 陸冠華
• Other Authors: Chih-Chin YANG
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/679y23

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 102 === In this thesis, the two terminal sensing devices and three terminal sensing devices were successfully fabricated by using the DC sputtering method and photo lithography method. The sensing devices are to detect the relative humidity value in the moisture environment using the zinc oxide sensing film with suitable aluminum doping. The measurements of resistance value, capacitance value, inductance value and current to voltage characteristic at different relative humidity environment were also completed for the sensing property of zinc oxide sensing device. The resistance value of zinc oxide sensing device are respectively 18 KΩ at 30% RH and 4 KΩ at 90% RH. The variation of resistance value reaches as up to the 14 KΩ from 30% RH to 90% RH. The adsorption time and desorption time of resistance measurement are 40 seconds and 60 seconds respectively. The capacitance value of zinc oxide sensing device are respectively 5.2 nF at 30% RH and 5.7 nF at 90% RH. The variation of capacitance value reaches as up to the 0.5 nF from 30% RH to 90% RH. The adsorption time and desorption time of capacitance measurement are 35 seconds and 35 seconds respectively. The inductance value of zinc oxide sensing device are respectively 2.8 H at 30% RH and 0.1 H at 90% RH. The variation of inductance value reaches as up to the 2.7 H from 30% RH to 90% RH. The adsorption time and desorption time of inductance measurement are 40 seconds and 20 seconds respectively.