Research of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 102 === This thesis investigates on the improvement of sputtered TiO2 AlGaN/GaN metal-oxide-semiconductor high electron-MobilityTransistor (MOS-HEMT) by post oxide annealing (POA). Device fabrication stared with “mesa Isolation”, “source and drain Ohmic contact”, “TiO...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r96ttp |