Numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field

碩士 === 國立中央大學 === 機械工程學系 === 102 === A three-dimensional numerical simulation has been performed to understand the motion of the melt flow, thermal field and oxygen distributions during the Czochralski silicon single crystal growth process under the influence of a transverse magnetic field. With the...

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Bibliographic Details
Main Authors: Pei-yi Chiang, 江姵儀
Other Authors: Jyh-Chen Chen
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/26192033905626159946