Molecular Beam Epitaxial Growth of Antimonide-based High Mobility Channel Transistors
博士 === 國立中央大學 === 電機工程學系 === 102 === Along with the increase in device density of Si-based integrated circuits, power consumption and heat dissipation have become key issues that cannot be ignored any more. Replacing Si with high mobility materials to realize high performance transistors with low op...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72515159639586580231 |