Fabrication and Characterization of Al2O3/InAs Fin Field-Effect Transistors
碩士 === 國立中央大學 === 電機工程學系 === 102 === Because of its narrow band gap, high electron mobility and high electron saturation velocity, InAs is considered a promising candidate for low power consumption field-effect transistors (FETs). Its fin field-effect transistors (FinFETs) might be used in the int...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97923083246721413585 |