850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
碩士 === 國立中央大學 === 電機工程學系 === 102 === This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-en...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84472209886057899199 |