The characteristics of NiCo thin film on Si and SiGe substrates
碩士 === 國立中央大學 === 電機工程學系 === 102 === NiCo (10 at.% of Co) alloy was employed for the formation of the metal silicide and germanosilicide as the contact layer for future CMOS source/drain. The resistivity and structure evolution of NiCo silicide and germanosilicide were investigated, and the performa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10068335851480847625 |