Analysis and simulation of 3-D Gate-All-Around Transistor

Analysis and simulation of 3-D Gate-All-Around Transistor

碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we stu...

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Bibliographic Details
Main Authors:	Wen-hsu Shih, 施玟旭
Other Authors:	Yao-Tsung Tasi
Format:	Others
Language:	zh-TW
Published:	2014
Online Access:	http://ndltd.ncl.edu.tw/handle/04925226925387115363

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