Analysis and simulation of 3-D Gate-All-Around Transistor
碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we stu...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/04925226925387115363 |