Analysis and simulation of 3-D Gate-All-Around Transistor
碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we stu...
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ndltd-TW-102NCU054420442015-10-13T23:55:40Z http://ndltd.ncl.edu.tw/handle/04925226925387115363 Analysis and simulation of 3-D Gate-All-Around Transistor 三維空間環繞式閘極電晶體之模擬級分析 Wen-hsu Shih 施玟旭 碩士 國立中央大學 電機工程學系 102 In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we study the dependance of threshold voltage on the substrate thickness in the gate-all-around MOSFET. At last , we analyze characteristics of the junctionless MOSFET and conventional MOSFET. The basic operating principles of the two MOSFETs will be compared. We discuss how to choose poly-gate type on these two MOSFETs. Finally, we change the parameters to study the impact to these two MOSFETs. Yao-Tsung Tasi 蔡曜聰 2014 學位論文 ; thesis 57 zh-TW |
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碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we study the dependance of threshold voltage on the substrate thickness in the gate-all-around MOSFET. At last , we analyze characteristics of the junctionless MOSFET and conventional MOSFET. The basic operating principles of the two MOSFETs will be compared. We discuss how to choose poly-gate type on these two MOSFETs. Finally, we change the parameters to study the impact to these two MOSFETs.
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| author2 |
Yao-Tsung Tasi |
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Yao-Tsung Tasi Wen-hsu Shih 施玟旭 |
| author |
Wen-hsu Shih 施玟旭 |
| spellingShingle |
Wen-hsu Shih 施玟旭 Analysis and simulation of 3-D Gate-All-Around Transistor |
| author_sort |
Wen-hsu Shih |
| title |
Analysis and simulation of 3-D Gate-All-Around Transistor |
| title_short |
Analysis and simulation of 3-D Gate-All-Around Transistor |
| title_full |
Analysis and simulation of 3-D Gate-All-Around Transistor |
| title_fullStr |
Analysis and simulation of 3-D Gate-All-Around Transistor |
| title_full_unstemmed |
Analysis and simulation of 3-D Gate-All-Around Transistor |
| title_sort |
analysis and simulation of 3-d gate-all-around transistor |
| publishDate |
2014 |
| url |
http://ndltd.ncl.edu.tw/handle/04925226925387115363 |
| work_keys_str_mv |
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