| Summary: | 碩士 === 國立中央大學 === 化學工程與材料工程學系 === 102 === Resistance Random Access Memory (RRAM) has great potentials in two-dimension (2D) high density crossbar array applications owning to its simple structure and small unit area. Moreover, RRAM has many advantages such as nonvolatile property, low power consumption, high operation speed and low cost. With all these benefits, RRAM become one of the best candidates for next generation nonvolatile memory applications.
There are three main sections in this thesis. In the first section, the oxidation of titanium is investigated by rapid thermal oxidation (RTO) with different conditions. After depositing Pt as top electrode, the electrical analysis of this titanium oxide (TiOx) is also performed. In the second section, we investigate the characteristics of 2D MIIM double-layer RRAM with tantalum oxide (TaOx) or aluminum oxide (Al2O3) deposited on RTO TiOx/Ti structure with Ta or Pt as top electrodes respectively. In the third section, we will discuss the characteristic of double-layer RRAM realized in 3D structure. We use RTO method to grow titanium oxide since this method allows the film to grow locally on the vertical sidewall which can improve the poor step coverage of PVD film. Furthermore, the adjustable RTO conditions including different O2/N2 ratio, temperature and oxidation time that give the various result of TiOx. Therefore, it is worth to investigate the influence on RTO TiOx that may plays an important role in the double-layer RRAM system.
We have successfully fabricated the titanium oxide diode with rectifying characteristic by using RTO method in the first section. In addition, the 2D Ta/TaOx/TiOx/Ti and Pt/Al2O3/TiOx/Ti double-layer RRAM devices have excellent memory retention and the strong immunity to read disturbance ; the 3D double-layer RRAM devices also has the excellent memory retention and the strong immunity to read disturbance , therefore the TiOx formed by RTO process can be used in the three-dimensional MIIM double-layer RRAM.
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