Study of Double-layer Resistive Switching Random Access Memory Prepared by Rapid Thermal Oxidation
碩士 === 國立中央大學 === 化學工程與材料工程學系 === 102 === Resistance Random Access Memory (RRAM) has great potentials in two-dimension (2D) high density crossbar array applications owning to its simple structure and small unit area. Moreover, RRAM has many advantages such as nonvolatile property, low power consumpt...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83800752425076478440 |