Device Performance Enhancement of AlGaN/GaN MIS-HEMT Using High-k Materials for Surface Passivation and Gate Insulator
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 102 === In recent years, AlGaN/GaN high electron mobility transistors (HEMTs) have been widely studied for high power applications. However their performance and reliability are limited by the gate leakage current and drain current collapse. The utilization of insula...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ryf4vv |