Effect of Physical Properties of Polishing Pad on Copper Chemical Mechanical Polishing Process

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 102 === Chemical mechanical planarization (CMP) process has been widely used in integrated circuit(IC) fabrication, by which the deposit film can be removed through the interactive process of polishing pads, slurries and wafers, and to achieve the desired su...

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Bibliographic Details
Main Authors: Kao, Tzu-Pin, 高子斌
Other Authors: Chang, Yi
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/65713468785079864304