Chemical Reaction Simulation and Analysis of GaN/p-GaN Thin Film Deposition in MOCVD Process
碩士 === 國立交通大學 === 機械工程系所 === 102 === In the metalorganic chemical vapor deposition (MOCVD) process to grow GaN and p-GaN thin film on silicon wafer, a sequence of gas-phase and surface-phase reactions between Ga(CH3)3, Cp2Mg, and NH3 precursors occurred, which have a great influence on the film unif...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14737681677494736847 |