GaN HEMTs Power Module Package Design, Electrical Test, and Performance Evaluation
碩士 === 國立交通大學 === 機械工程系所 === 102 === This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Each device is wire-bonded in parallel connection to increase the power rating. This work studies the Ga...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97804182572483966610 |