The realization of LLC resonant circuit based on GaN

• Main Authors: Shie, Bo-Jung, 謝博仲
• Other Authors: Chieng, Wei-Hua
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/25751118159196705966

碩士 === 國立交通大學 === 機械工程系所 === 102 === The purpose of this study is designing a LLC resonant circuit with DC input 145V~165V and DC output 12V/25A. Maximum efficiency can be reached to 91%. This study designs the faster switching circuit based on NCTU_GaN_SBD. The GaN has excellent material characteristics, such as high breakdown voltage, high electron saturation velocity and high current density, and it can effectively reduce switching losses. Finally, this research tries to use the GaN as switch to replace MOSFET. This study finds that the efficiency of LLC resonant circuit based on GaN is better than MOSFET. It can improve the efficiency 1.04% at light load, 0.20% at half load and 0.47% at full load.