The realization of LLC resonant circuit based on GaN
碩士 === 國立交通大學 === 機械工程系所 === 102 === The purpose of this study is designing a LLC resonant circuit with DC input 145V~165V and DC output 12V/25A. Maximum efficiency can be reached to 91%. This study designs the faster switching circuit based on NCTU_GaN_SBD. The GaN has excellent material characteri...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25751118159196705966 |