The Hysteresis in Capacitance-voltage Measurements Caused by the Storage Carriers in GaAsN/GaAs Quantum Well
碩士 === 國立交通大學 === 電子物理系所 === 102 === This dissertation investigates hysteresis in capacitance-voltage measurements caused by the electron storage in GaAsN/GaAs quantum well. We discuss the properties of light-induced the voltage in quantum and the role of the photo-current illuminated by 1.32eV ligh...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88052231022611046227 |