Activation Energy and Surface Morphology Characterization of the N-face GaN Substrate by Phosphoric Acid Etch
碩士 === 國立交通大學 === 電子物理系所 === 102 === This study is about Phosphoric Acid etching on GaN substrate. We can find the nitrogen surface of GaN showed many different characteristics of dodecagonal pyramids which were measured by SEM. When two different kinds of GaN substrate grown at different temperatur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62474980693773150296 |