Study and Application of Hydrogen Etch on GaN
博士 === 國立交通大學 === 電子物理系所 === 102 === Although it is a well-known effect that hydrogen can increase the decomposition rate of gallium nitride (GaN), most studies focus on the role of it as a carrier gas during epitaxial growth. Studies of hydrogen etch are therefore scarce. Moreover, there is almost...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94937549585146648012 |