Investigation on the Electrical Analysis and Reliability Issues in Advanced High-k/Metal Gate MOSFETs
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Many years of research and development has shown that one valid way to solve problems of gate leakage current is that replacing conventional SiO2 gate dielectric with high-k dielectric, especially with HfO2 gate dielectrics. HfO2 gate dielectrics have been...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02687812676784983252 |