Investigation of Metal-Oxide InGaZnO Thin Film Transistors Using Stacked Gate Dielectrics and Dual Channels
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === InGaZnO-based thin film transistors have attracted increasing attention in recent years because of the relatively low cost and good uniformity compared to the amorphous-silicon and poly-silicon TFTs. Besides, IGZO TFTs can be processed with a low thermal bu...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h2kn32 |